HG2N60 transistor equivalent, n-channel mosfet transistor.
Download (132.03KB)
*Drain Current –ID= 2A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) *Avalanch.
Image gallery
TAGS
Manufacturer