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FDB2710 Datasheet, Inchange Semiconductor

FDB2710 transistor equivalent, n-channel mosfet transistor.

FDB2710 Avg. rating / M : 1.0 rating-11

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FDB2710 Datasheet

Features and benefits


*Drain Current : ID= 50A@ TC=25℃
*Drain Source Voltage : VDSS= 250V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max)
*100% avalanche tested.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 50 .

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FDB2710 Page 1 FDB2710 Page 2

TAGS

FDB2710
N-Channel
MOSFET
Transistor
FDB20AN06A0
FDB24AN06LA0
FDB2532
Inchange Semiconductor

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