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FDB120N10 Datasheet, Inchange Semiconductor

FDB120N10 transistor equivalent, n-channel mosfet transistor.

FDB120N10 Avg. rating / M : 1.0 rating-11

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FDB120N10 Datasheet

Features and benefits


*Drain Current : ID= 74A@ TC=25℃
*Drain Source Voltage : VDSS= 100V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V
*100% avalanc.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 74 .

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TAGS

FDB120N10
N-Channel
MOSFET
Transistor
Inchange Semiconductor

Manufacturer


Inchange Semiconductor

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