logo

FDB120N10 Datasheet, Inchange Semiconductor

FDB120N10 transistor equivalent, n-channel mosfet transistor.

FDB120N10 Avg. rating / M : 1.0 rating-11

datasheet Download

FDB120N10 Datasheet

Features and benefits


*Drain Current : ID= 74A@ TC=25℃
*Drain Source Voltage : VDSS= 100V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V
*100% avalanc.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 74 .

Image gallery

FDB120N10 Page 1 FDB120N10 Page 2

TAGS

FDB120N10
N-Channel
MOSFET
Transistor
FDB12N50F
FDB12N50TM
FDB12N50U
Inchange Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts