D1576 transistor equivalent, silicon npn power transistor.
*Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UN.
*High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.)
*High Switching Speed
*Wide Area of Safe Operation
APPLICATIONS
*Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETE.
Image gallery
TAGS