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Inchange Semiconductor

C4758 Datasheet Preview

C4758 Datasheet

2SC4758

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4758
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching power supply output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwEmitter-Base Voltage
VALUE UNIT
1500
V
600 V
5V
IC Collector Current- Continuous
8
A
ICP Collector Current-Pulse
16 A
IBB Base Current- Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
4A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
www.DataSheet.in




Inchange Semiconductor

C4758 Datasheet Preview

C4758 Datasheet

2SC4758

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4758
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0
600 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.5A
5.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 1.5A
1.5 V
ICBO Collector Cutoff Current
VCB= 1500V ; IE= 0
1.0 mA
IEBO Emitter Cutoff Current
VEB= 5V ; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
i.cnhFE-2
DC Current Gain
IC= 6A ; VCE= 5V
.iscsemfT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
wwwCOB Output Capacitance
IE=0 ; VCB=10V;ftest=1.0MHz
8
48
13
MHz
175 pF
Switching times, Resistive load
tstg Storage Time
tf Fall Time
IC= 6A , IB1= 1.2A ; IB2= -2.4A
RL=32Ω
2.5 μs
0.2 μs
isc Websitewww.iscsemi.cn
www.DataSheet.in
2


Part Number C4758
Description 2SC4758
Maker Inchange Semiconductor
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C4758 Datasheet PDF






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