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Inchange Semiconductor

C3783 Datasheet Preview

C3783 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3783
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·High Switching Speed
APPLICATIONS
·High speed and high voltage switching applications.
·Switching regulator applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900 V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous 5 A
ICM Collector Current-Pulse
7A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
3A
100 W
150
-55~150
isc Websitewww.iscsemi.cn




Inchange Semiconductor

C3783 Datasheet Preview

C3783 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3783
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO Collector Cutoff Current
VCB= 800V; IE= 0
1.0 V
1.5 V
0.1 mA
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
10
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
VCC400V, IB1= 0.3A; IB2= -0.8A
RL= 133Ω;PW=20μs;
Duty Cycle1%
1.0 μs
3.5 μs
1.0 μs
isc Websitewww.iscsemi.cn
2


Part Number C3783
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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C3783 Datasheet PDF






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