INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3783
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·High Switching Speed
APPLICATIONS
·High speed and high voltage switching applications.
·Switching regulator applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900 V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous 5 A
ICM Collector Current-Pulse
7A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
3A
100 W
150 ℃
-55~150
℃
isc Website：www.iscsemi.cn
