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C3371 - 2SC3371

Description

Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A High Speed Switching APPLICATIONS

Designed for power switching applications.

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3371 DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching · APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w s c s .i VALUE 800 V 500 V 7 V 15 A 30 A 5 A UNIT n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC 200 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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