BUZ101 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor BUZ101.

BUZ101 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BUZ101
Manufacturer	Inchange Semiconductor
File Size	288.35 KB
Description	N-Channel MOSFET Transistor
Download	BUZ101 Download (PDF)

General Description

·motor drive, DC-DC converter, power switch and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pluse 116 A PD Total Dissipation @TC=25℃ 100 W TJ Max.

Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0;

Key Features

Drain Current : ID= 29A@ TC=25℃.
Drain Source Voltage : VDSS= 50V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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