BUX66B transistor equivalent, silicon npn power transistor.
*Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switc.
*Contunuous Collector Current-IC= -2A
*Power Dissipation-PD= 35W @TC= 25℃
*Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -1A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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