BUX41N transistor equivalent, silicon npn power transistor.
*Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
* Collector-Emitter Voltage-
: VCEO= 160V(Min)
*High Current Capability
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high speed, high curren.
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