BUW40B transistor equivalent, silicon npn power transistor.
*Designed for high voltage and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B
*High Switching Speed
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable oper.
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