BUW12W transistor equivalent, silicon npn power transistor.
*Designed for high voltage, fast switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARA.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 6A
*High Speed Switching
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
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