BUV51 transistor equivalent, silicon npn power transistor.
*Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETE.
*High Current Capability
*Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @IC= 5A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high .
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