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BUV24 - Silicon NPN Power Transistor

BUV24 Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 0. High Power Dissipation. Collector-Emitter Sustaining Voltage- : VCEO(SU.

BUV24 Applications

* Designed for use in power switching applications in military and industrial equipments. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emi

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Datasheet Details

Part number
BUV24
Manufacturer
Inchange Semiconductor
File Size
208.89 KB
Datasheet
BUV24-INCHANGESemiconductor.pdf
Description
Silicon NPN Power Transistor

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📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUV24-like datasheet