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BUK446-800B - N-Channel MOSFET Transistor

Download the BUK446-800B datasheet PDF. This datasheet also covers the BUK446-800A variant, as both devices belong to the same n-channel mosfet transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Drain Source Voltage- : VDSS=800V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance applic

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Note: The manufacturer provides a single datasheet file (BUK446-800A-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BUK446-800B PowerMOS transistor NXP
BUK446-800A PowerMOS transistor NXP
BUK446-1000B PowerMOS transistor NXP
BUK444-200A PowerMOS transistor NXP
BUK444-200A N-Channel MOSFET INCHANGE

Other Datasheets by Inchange Semiconductor

Part Number Description
BUK446-800A N-Channel MOSFET Transistor
BUK444-220A N-Channel MOSFET Transistor
BUK444-800B N-Channel MOSFET Transistor
BUK445-200A N-Channel MOSFET Transistor
BUK445-200B N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK446-800A ID Current-continuous @ TC=25℃ BUK446-800B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 800 V ±30 V 2.0 A 1.7 30 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.
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