Datasheet4U Logo Datasheet4U.com

BU105 - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of BU105 PDF
datasheet Preview Page 2

Datasheet Details

Part number BU105
Manufacturer Inchange Semiconductor
File Size 207.46 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BU105_InchangeSemiconductor.pdf

BU105 Product details

Description

High Voltage-VCER= 1300V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCER Collector-Emitter Voltage

📁 BU105 Similar Datasheet

  • BU1006 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1006-E3 - Bridge Rectifiers (Vishay)
  • BU1006-M3 - Bridge Rectifiers (Vishay)
  • BU1006A - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1006A-E3 - Bridge Rectifiers (Vishay)
  • BU1008 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1008-E3 - Bridge Rectifiers (Vishay)
  • BU1008-M3 - Bridge Rectifiers (Vishay)
Other Datasheets by Inchange Semiconductor
Published: |