BU105
BU105 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Voltage-VCER= 1300V(Min.)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 2.5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE= 100Ω
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC= 90℃
Junction Temperature
℃
Tstg
Storage Temperature
-65~115 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 2.5 ℃/W isc website：.iscsemi....
