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BU105 - Silicon NPN Power Transistor

Description

High Voltage-VCER= 1300V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or

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isc Silicon NPN Power Transistor BU105 DESCRIPTION ·High Voltage-VCER= 1300V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCER Collector-Emitter Voltage RBE= 100Ω 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 90℃ TJ Junction Temperature 2.
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