BDY96D transistor equivalent, silicon npn power transistor.
*Designed for use in switching regulators applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS.
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