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BDY26C Datasheet, Inchange Semiconductor

BDY26C transistor equivalent, silicon npn power transistor.

BDY26C Avg. rating / M : 1.0 rating-12

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BDY26C Datasheet

Application


*Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN.

Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device performance and reliable operati.

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BDY26C Page 1 BDY26C Page 2

TAGS

BDY26C
Silicon
NPN
Power
Transistor
Inchange Semiconductor

Manufacturer


Inchange Semiconductor

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