BDX88B transistor equivalent, silicon pnp darlington power transistor.
*Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
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*High DC Current Gain-
: hFE= 750(Min)@ IC= -6A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C
*Complement to Type BDX87/A/B/C
*Minimum Lot-to-Lot variati.
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