BDX85C transistor equivalent, silicon npn darlington power transistor.
*Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
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*High DC Current Gain-
: hFE= 750(Min)@ IC= 3A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C
*Complement to Type BDX86/A/B/C
*Minimum Lot-to-Lot variations f.
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