BDX53F transistor equivalent, silicon npn darlington power transistor.
*Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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*Collector Current -IC= 8A
*High DC Current Gain-
: hFE= 500(Min)@ IC= 2A
*Complement to Type BDX54F
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in power linea.
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