BDX20 transistor equivalent, silicon pnp power transistor.
*Designed for LF large signal power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT.
*High Current Capability
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -140V(Min)
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for LF large.
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