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BDT63B - Silicon NPN Darlington Power Transistor

Download the BDT63B datasheet PDF. This datasheet also covers the BDT63 variant, as both devices belong to the same silicon npn darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BDT63_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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BDT63B Silicon Darlington Power Transistor Comset Semiconductors
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BDT63 Silicon Darlington Power Transistor Comset Semiconductors
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Other Datasheets by Inchange Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.