High Voltage: VCEV= -150V(Min)
Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A
High Reliablity
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power linear and switching application and
General puepose powe
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isc Silicon PNP Power Transistor
BDS19
DESCRIPTION ·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power linear and switching application and
General puepose power.
BDS19 Datasheet
