BDS19 transistor equivalent, silicon pnp power transistor.
*Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S.
*High Voltage: VCEV= -150V(Min)
*Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A
*High Reliablity
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power linear .
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