Datasheet4U Logo Datasheet4U.com

BDS19 Silicon PNP Power Transistor

BDS19 Description

isc Silicon PNP Power Transistor BDS19 .
High Voltage: VCEV= -150V(Min). Low Saturation Voltage- : VCE(sat)= -1. High Reliablity. Minimum Lot-to-Lot variatio.

BDS19 Applications

* Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base C

📥 Download Datasheet

Preview of BDS19 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDS19
Manufacturer
Inchange Semiconductor
File Size
213.04 KB
Datasheet
BDS19-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

📁 Related Datasheet

  • BDS19SMD - Silicon PNP Transistor (Seme LAB)
  • BDS10 - SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES (Seme LAB)
  • BDS101 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
  • BDS102 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
  • BDS103 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
  • BDS104 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
  • BDS105 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
  • BDS106 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)

📌 All Tags

Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor BDS19-like datasheet