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BDS19 - Silicon PNP Power Transistor

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Part number BDS19
Manufacturer Inchange Semiconductor
File Size 213.04 KB
Description Silicon PNP Power Transistor
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High Voltage: VCEV= -150V(Min) Low Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -4A High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continu

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