BDS12 transistor equivalent, silicon npn power transistor.
*Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S.
*High Voltage: VCEV= 100V(Min)
*Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
*High Reliablity
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power linear an.
Image gallery
TAGS
Download (Size : 210.78KB)