BD956 transistor equivalent, silicon pnp power transistor.
*Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
*DC Current Gain-
: hFE= 40(Min)@ IC= -500mA
*Complement to Type BD955
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*.
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