DC Current Gain -
: hFE = 40@ IC= -0.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
Complement to Type BD911
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general purpose power amplifier
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BD912. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Complement to Type B...
View more extracted text
tter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Complement to Type BD911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
BD912 Datasheet
