BD684 Overview
Description
Collector–Emitter Breakdown Voltage- : V(BR)CEO = -120V - DC Current Gain- : hFE = 750(Min) @ IC= -1.5 A - Complement to Type BD683 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BD684 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 189.89 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BD684 | Central Semiconductor | SILICON PNP TRANSISTOR |
| BD684 | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |
| BD684A | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |
| BD684 | Continental Device India | PNP DARLIGNTON POWER SILICON TRANSISTORS |
| BD680 | onsemi | PNP Silicon Transistor |