BD684 transistor equivalent, silicon pnp power transistor.
*Designed for audio and video output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT.
*Collector
–Emitter Breakdown Voltage—
: V(BR)CEO = -120V
*DC Current Gain—
: hFE = 750(Min) @ IC= -1.5 A
*Complement to Type BD683
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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