Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector- Emitter Breakdown Voltage-
: V(BR)CEO = -120V
- DC Current Gain-
: hFE = 750(Min) @ IC= -1.5 A
- plement to Type BD683
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio and video output...
