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BD637 Datasheet, Inchange Semiconductor

BD637 transistor equivalent, silicon npn power transistor.

BD637 Avg. rating / M : 1.0 rating-11

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BD637 Datasheet

Application


*Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI.

Description


*DC Current Gain - : hFE = 40(Min.)@ IC= 25mA
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.)
*Complement to Type BD638
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*.

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BD637 Page 1 BD637 Page 2

TAGS

BD637
Silicon
NPN
Power
Transistor
Inchange Semiconductor

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