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BD635 - Silicon NPN Power Transistor

Description

DC Current Gain - : hFE = 40(Min.)@ IC= 25mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Complement to Type BD636 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for amplifier and switching applications.

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isc Silicon NPN Power Transistor BD635 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Complement to Type BD636 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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