*Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI.

*DC Current Gain - : hFE = 40(Min.)@ IC= 25mA
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)
*Complement to Type BD636
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*.

BD63000MUV

BD63001AMUV

BD63002AMUV

BD63002MUV

BD63005AMUV

BD63005MUV

BD63006MUV

BD6300KU

BD63015EFV

BD63030EKV-C

BD63035EFV-M

BD63242EFV

BD6326ANUX

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts