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BD550B - Silicon NPN Power Transistors

Description

High Power Dissipation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

in audio amplifier circuits.

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isc Silicon NPN Power Transistors DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 275 V 275 V 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ BD550B · isc website：www.iscsemi.
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