BD546B transistor equivalent, silicon pnp power transistor.
*Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S.
*Collector Current -IC= -15A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C
*Complement to Type BD545/A/B/C
*Minimum Lot-to-Lot variations for robust device.
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