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Inchange Semiconductor

BD134 Datasheet Preview

BD134 Datasheet

Silicon PNP Power Transistor

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD134
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -45V(Min)
APPLICATIONS
·Designed for use in audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-45 V
VCEO
Collector-Emitter Voltage
-45 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-1.5 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-0.5 A
13 W
150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BD134 Datasheet Preview

BD134 Datasheet

Silicon PNP Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD134
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB=0
-45 V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A
-0.5 V
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -2V
-1.3 V
ICBO Collector Cutoff Current
VCB= -45V; IE= 0
-100 μA
IEBO Emitter Cutoff Current
VEB= -5V; IC=0
-1.0 mA
hFE-1
DC Current Gain
IC= -150mA ; VCE= -2V
40 250
hFE-2
DC Current Gain
IC= -0.5A ; VCE= -2V
25
fT Current-Gain—Bandwidth Product IC=-250mA;VCE=-10V,ftest= 1.0MHz 3.0
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BD134
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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