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BD107 Datasheet Preview

BD107 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 65V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for driver and output stages and high
Power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
65
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2.5
A
12
W
175
Tstg
Storage Temperature Range
-55~175
BD107
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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BD107 Datasheet Preview

BD107 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(SUS) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 0
VCE(SAT) Base-Emitter Saturation Voltage
IC= 2.5A; VCE= 0.25A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
hFE-1 Classifications
A
B
50-150 100-300
BD107
MIN TYP. MAX UNIT
60
V
1.0
V
0.5 μA
0.5 μA
50
300
35
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BD107
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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