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Inchange Semiconductor

BD107 Datasheet Preview

BD107 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD107
DESCRIPTION
·Continuous Collector Current -IC= 2.5A
·Power Dissipation-PD=12W @TC= 25
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for driver and output stages and high
power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
65 V
VCEO
Collector-Emitter Voltage
65 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2.5 A
PC Collector Power Dissipation@TC=2512
W
TJ Junction Temperature
-55~175
Tstg Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
13 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BD107 Datasheet Preview

BD107 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD107
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICBO Collector Cutoff Current
VCB= 60V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
fT Current-Gain—Bandwidth Product IC=0.3A; VCE= 10V
MIN MAX UNIT
60 V
1.0 V
0.5 uA
0.5 uA
50 300
35
50 MHz
hFE-1 Classifications
AB
50-150 100-300
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BD107
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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