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A940 - 2SA940

Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) DC Current Gain : hFE= 40-140@ IC= -0.5A Complement to Type 2SC2073 APPLICATIONS

vertical output applications.

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA940 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -150 V -150 V -5 V -1.5 A -3.0 A 25 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.
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