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Inchange Semiconductor

5N50 Datasheet Preview

5N50 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
5N50
·DESCRIPTION
·Drain Current ID= 5A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
500
±30
4.5
V
V
A
ID(puls)
Pulse Drain Current
20 A
Ptot Total Dissipation@TC=25
100 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.67 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

5N50 Datasheet Preview

5N50 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
5N50
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IS=4.5A ;VGS= 0
VGS= 10V; ID=2.5A
VGS= ±30V;VDS= 0
VDS= 500V; VGS= 0
MIN TYPE MAX UNIT
500 V
2.0 4.0 V
1.5 V
1.6 Ω
±100 nA
10 µA
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 5N50
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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