Datasheet Details
| Part number | 5N50 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 230.38 KB |
| Description | TO-220F N-Channel MOSFET |
| Datasheet |
 5N50 Datasheet
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| Part number | 5N50 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 230.38 KB |
| Description | TO-220F N-Channel MOSFET |
| Datasheet |
5N50 Datasheet
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·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A ID(puls) Pulse Drain Current 18 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.57 ℃/W 5N50 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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5N50 | N-Channel Power MOSFET | VBsemi |
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5N50 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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5N50-P | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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5N50C | N-Channel MOSFET | Fairchild Semiconductor |
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5N50K | 5A 500V N-CHANNEL MOSFET | UNISONIC TECHNOLOGIES |
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