3DD7G transistor equivalent, silicon npn power transistor.
*Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATING.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
APPLICATIONS
*Designed for power amplifier, low speed switching and
regulated power supply applications.
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