3DD5024 - Silicon NPN Power Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) Wide Area of Safe Operation Built-in Damper Diode APPLICATIONS

applicaitions.

Inchange Semiconductor

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Datasheet Details

Part number	3DD5024
Manufacturer	Inchange Semiconductor
File Size	151.93 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD5024 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 8 A IB Base Current- Continuous 4A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Product Specification 3DD5024 isc website：www.iscsemi.

Published: Nov 22, 2016 |