3DD4515 transistor equivalent, silicon npn power transistor.
*Designed for power amplifier,high speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATING.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC=10A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designe.
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