logo

3DD101A Datasheet, Inchange Semiconductor

3DD101A transistor equivalent, silicon npn power transistor.

3DD101A Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 191.00KB)

3DD101A Datasheet

Application


*Designed for power amplifier,DC-DC converter and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=.

Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
*DC Current Gain- : hFE= 20(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A
*Minimum Lot-to-Lot variations for robust device performance .

Image gallery

3DD101A Page 1 3DD101A Page 2

TAGS

3DD101A
Silicon
NPN
Power
Transistor
Inchange Semiconductor

Manufacturer


Inchange Semiconductor

Related datasheet

3DD101

3DD101B

3DD101C

3DD101D

3DD101E

3DD10

3DD100

3DD100A

3DD100B

3DD100C

3DD100D

3DD100E

3DD102

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts