3AD53 transistor equivalent, silicon pnp power transistor.
*Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME.
*DC Current Gain-
: hFE=20-140@IC= -4A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -4A
*
APPLICATIONS
*Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL.
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