30N06 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤0.05Ω.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

30N06 N-Channel MOSFET by Inchange Semiconductor - Datasheet Preview — Datasheet preview – 30N06

Datasheet Details

Part number	30N06
Manufacturer	Inchange Semiconductor
File Size	281.66 KB
Description	N-Channel MOSFET
Datasheet	30N06 Datasheet
Additional preview pages of the 30N06 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 105 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.19 UNIT ℃/W 30N06 isc website：www.iscsemi.

Published: Jul 24, 2016 |