Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Static drain-source on-resistance:
RDS(on) ≤0.05Ω
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Be suitable for synchronous rectification for server and general purpose applications
-...
