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2SK958 - N-Channel MOSFET Transistor

Description

Drain Current ID=2A@ TC=25℃ Drain Source Voltage- : VDSS=900V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed especially for high voltage.

high speed power switching.

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage. ·high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK958 isc website：www.iscsemi.
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