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2SK806 Datasheet Inchange Semiconductor

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Inchange Semiconductor · File Size : 201.44KB 2SK806 · star-11

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℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A.

2SK806 2SK806 2SK806
TAGS
N-Channel
MOSFET
Transistor
2SK800
2SK801
2SK802

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