2SK636 transistor equivalent, n-channel mosfet transistor.
*Drain Current
–ID=8A@ TC=25℃
*Drain Source Voltage-
: VDSS= 500V(Min)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust de.
such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-C.
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