2SK610 transistor equivalent, n-channel mosfet transistor.
*Drain Current
–ID=3A@ TC=25℃
*Drain Source Voltage-
: VDSS= 400V(Min)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust de.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*High Voltage.
*High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max. Operating.
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