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2SK557 Inchange Semiconductor N-Channel MOSFET Transistor

Description ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATIN...
Features YMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=6A VSD Diode Forward Voltage IF= 12A; VGS=0 IGSS Gate Source Leakage Current VGS= ±16V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 ...

Datasheet PDF File 2SK557 Datasheet - 236.39KB

2SK557  






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