2SK357 transistor equivalent, n-channel mosfet transistor.
*High speed power switching applications.
*High Drain Current.
*High forward transfer admittance
*Low le.
*Drain Current
–ID= 5A@ TC=25℃
*Drain Source Voltage-
: VDSS= 150V(Min)
*Fast Switching Speed
APPLICATIONS
*High speed power switching applications.
*High Drain Current.
*High forward transfer admittance
*.
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