2SK1612 transistor equivalent, n-channel mosfet transistor.
*Designed for high voltage, high speed power switching
applications such as switching regulators, converters, soleno.
*Drain Current
–ID=3A@ TC=25℃
*Drain Source Voltage-
: VDSS=900V(Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high voltage, high speed power switc.
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