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2SK1386 - N-Channel MOSFET Transistor

Description

Drain Current ID= 7A@ TC=25℃ Drain Source Voltage- : VDSS=450 (Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line s

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 7 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1386 isc website:www.iscsemi.
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